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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage :VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER HAN INC Collector-emitter voltage Emitter-base voltage Collector current Base current Collector-base voltage SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -150 -150 -5 -12 -1.2 UNIT V V V A A W ae ae Open collector Collectorl power dissipation Junction temperature Storage temperature TC=25ae 120 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-0.1A; IB=0 IE=-10mA; IC=0 IC=-5 A;IB=-0.5 A IC=-5A ; VCE=-5V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-10V IE=0; VCB=-10V;f=1MHz 55 20 MIN -150 -5 TYP. 2SB755 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT COB MAX UNIT V V -2.0 -1.5 -50 -50 160 |I |I V V A A Output capacitance O 80-160 hFE classifications R 55-110 HAN INC SEM GE OND IC TOR UC 450 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB755 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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